53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 325-328

  Huber, D ^a   Bitter, M ^a   Dulk, M ^a   Fischer, S ^a   Gini, E ^a   Neiger, A ^a   Schreieck, R ^a   Bergamaschi, C ^a   Jackel, H ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ON-WAFER PROBE; PHOTORECEIVER;

AMPLIFIERS (ELECTRONIC); BANDWIDTH; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED OPTOELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

PHOTODIODES;

EID: 0033703292     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

1. th Conference on Indium Phosphide and Related Materials, Post deadline papers pp. 6-7, May 1999
2. D. Huber et al., "InP/InGaAs Single HBT Technology for Photoreceiver OEIC at 40 Gb/s and Beyond", accepted for publication by Journal of lightwave technology
3. K. Takahata et al., "52 GHz bandwidth monolithically integrated WGPD/HEMT photo-receiver with large O/E conversion factor of 105 V/W", Electronics letters vol. 35 no. 19, pp. 1639-1640, September 1999
4. T. Vanisri, et al., "Integrated high frequency low noise current-mode optical transimpedance preamplifiers" Journal of solid state circuits, vol. 30 no. 6, pp. 677-685, June 1995
5. P. A. Schulz et. al, "Impulse Response Measurements with 50-GHz Bandwidth", IEEE Microwave and Guided Wave Letters, vol. 9 no. 3, pp. 120-122, March 1999
6. G. Lucovsky et. al, "Transit-time considerations in pin-diodes", Journal of applied physics, vol. 35 no. 3, pp. 622-627, March 1964
7. D. E. Sawyer et. all "Narrow Base Germanium Photodiodes", Proc. of IRE, vol. 46 no. 6, pp. 1122-1130, June 1958