Properties of Mn and Co implanted ZnO crystals

Solid-State Electronics

Volumn 47, Issue 9, 2003, Pages 1523-1531

  Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Pashkova, N V ^a   Pearton, S J ^b   Overberg, M E ^b   Abernathy, C R ^b   Norton, D P ^b   Zavada, J M ^c   Wilson, R G ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; ELECTRON TRANSITIONS; ION IMPLANTATION; LIGHT ABSORPTION; RADIATION DAMAGE;

MICROCATHODOLUMINESCENCE (MCL);

ZINC OXIDE;

EID: 0038040508     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00083-2     Document Type: Article

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