Direct evidence for quantum contact resistance effects in V-groove quantum wires

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 756-759

  Kaufman, D ^a   Dwir, B ^a   Rudra, A ^a   Utke, I ^a   Palevski, A ^b   Kapon, E ^a  

^a EPFL   (Switzerland)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CONTACTS; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033717271     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00052-7     Document Type: Article

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