Electron transport in modulation-doped GaAs v-groove quantum wires

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 760-765

  Schwarz, A ^a   Kaluza, A ^a   Schäpers, Th ^a   Hardtdegen, H ^a   Luth H ^a   Meertens, D ^a   Dieker, Ch ^b   Maciel, A C ^c   Kim, J ^c   O'Sullivan, E D ^c   Ryan, J F ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; MAGNETIC FIELD EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; MAGNETOTRANSPORT PROPERTIES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0033718875     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00053-9     Document Type: Article

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