Evolution of the band structure of β-In2S3 - 3xO3x buffer layer with its oxygen content

Journal of Applied Physics

Volumn 93, Issue 9, 2003, Pages 5456-5459

  Barreau, N ^a   Marsillac, S ^a   Bernede J C ^a   Assmann, L ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FERMI LEVEL; HETEROJUNCTIONS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SOLAR CELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON AFFINITY; VALENCE BANDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037986594     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1565823     Document Type: Article

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