Physico-chemical characterization of β-In2S3 thin films synthesized by solid-state reaction, induced by annealing, of the constituents sequentially deposited in thin layers

Vacuum

Volumn 56, Issue 2, 2000, Pages 101-106

  Barreau, N ^a   Marsillac, S ^a   Bernede J C ^a  

^a Lab Plasmas et des Couches Minces   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLIZATION; DEPOSITION; EVAPORATION; FILM GROWTH; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM SULFIDE; SOLID STATE REACTIONS; VACUUM THERMAL EVAPORATION;

SEMICONDUCTING FILMS;

EID: 0033893265     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(99)00176-1     Document Type: Article

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