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Volumn 32, Issue 9, 1997, Pages 1193-1200

Band alignment at the interface of a SnO2/γ-In2Se3 heterojunction

Author keywords

A. electronic materials; A. multilayers; A. thin films; C. photoelectron spectroscopy; D. electrical properties

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACES (MATERIALS); MULTILAYERS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0031234780     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(97)00090-1     Document Type: Article
Times cited : (24)

References (20)
  • 4
    • 0042208515 scopus 로고    scopus 로고
    • thesis, University of Nantes
    • S. Marsillac, thesis, University of Nantes, 1996.
    • (1996)
    • Marsillac, S.1
  • 20
    • 0002769418 scopus 로고
    • ed. R.K. Willardson and A.C. Beer, Academic, New York
    • H.J. Hovel, in Semiconductors and semimetals, ed. R.K. Willardson and A.C. Beer, pp 131-132, Academic, New York (1975).
    • (1975) Semiconductors and Semimetals , pp. 131-132
    • Hovel, H.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.