Spatially resolved poisson strain and anticlastic curvature measurements in Si under large deflection bending

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3856-3858

  Yang, Wenge ^a   Larson, B C ^a   Ice, G E ^a   Tischler, J Z ^a   Budai, J D ^a   Chung, K S ^a   Lowe, W P ^b  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b HOWARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BENDING (DEFORMATION); ELASTICITY; SCANNING; STRAIN;

POISSON STRAIN;

SILICON;

EID: 0037970123     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579857     Document Type: Article

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