Growth and characterization of Ga2Se3/GaAs(1 0 0) epitaxial thin films

Journal of Crystal Growth

Volumn 207, Issue 1, 1999, Pages 69-76

  Ueno, K ^a   Kawayama, M ^a   Dai, Z R ^b   Koma, A ^a   Ohuchi, F S ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; POINT DEFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STACKING FAULTS; THIN FILMS; TWINNING;

GALLIUM SELENIDE; VACANCY ORDERING;

SEMICONDUCTING FILMS;

EID: 0033336917     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00359-0     Document Type: Article

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