Ultrathin silicon oxide film growth with in situ passivation by using pyrolytic N2O

Journal of Materials Science Letters

Volumn 21, Issue 19, 2002, Pages 1493-1495

  Yamada, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; FILM GROWTH; MOS DEVICES; NITROGEN OXIDES; PASSIVATION; PYROLYSIS; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS;

FOWLER-NORDHEIM TUNNELING ELECTRON; PYROLYTIC-GAS PASSIVATION METHOD; TIME-DEPENDENT DIELECTRIC BREAKDOWN; ULTRATHIN SILICON OXIDE FILM;

ULTRATHIN FILMS;

EID: 0036805445     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1020084012177     Document Type: Article

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