Ion dose dependence on solid phase epitaxy of amorphous silicon carbide induced by ion implantation

Materials Research Society Symposium - Proceedings

Volumn 742, Issue , 2002, Pages 67-72

  Bae, In Tae ^a   Ishimaru, Manabu ^a   Hirotsu, Yoshihiko ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; CRYSTALLIZATION; DOSIMETRY; EPITAXIAL GROWTH; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY;

SOLID PHASE EPITAXY;

SILICON CARBIDE;

EID: 0037956003     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-742-k2.1     Document Type: Conference Paper

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