Strain fields and unit cell deformation in high-Tc superconductor heterostructures

Thin Solid Films

Volumn 302, Issue 1-2, 1997, Pages 239-249

  Gusso, M ^a   De Caro, L ^a   Tapfer, L ^a  

^a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

Elastic properties; Structural properties; Superconductivity; Superlattices

Indexed keywords

BOUNDARY CONDITIONS; CRYSTAL ORIENTATION; CRYSTAL SYMMETRY; ELASTICITY; EPITAXIAL GROWTH; FILM GROWTH; HIGH TEMPERATURE SUPERCONDUCTORS; MATHEMATICAL MODELS; SEMICONDUCTOR SUPERLATTICES; STRAIN; SUPERCONDUCTIVITY; THIN FILMS;

SUPERCONDUCTING HETEROSTRUCTURES;

HETEROJUNCTIONS;

EID: 0031163272     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09523-5     Document Type: Article

References (40)

1. D.T. Shaw, C.C. Tsuei, T.R. Schneider and Y. Shiohara (Eds.), Layered Superconductors: Fabrication, Properties and Applications, Materials Research Society Symposium Proceedings, Vol. 275, San Francisco, CA, 1992.
2. R. Ramesh, D. Hwang, T.S. Ravi, A. Inam, J.B. Barner, L. Nazar, S.W. Chan, C.Y. Chen, B. Dutta, T. Venkatesan and X.D. Wu, Appl. Phys. Lett., 56 (1990) 2243.
3. X.X. Xi, J. Geerk, G. Linker, Q. Li and O. Meyer, Appl. Phys. Lett., 54 (1989) 2367.
4. J. Zegenhagen, T. Siegrist, E. Fontes, L.E. Berman and J.R. Patel, Solid State Commun., 93 (1995) 763.
5. T. Venkatesan, X.D. Wu, B. Dutta, A. Inam, M.S. Hedge, D.M. Hwang, C.C. Chang, L. Nazar and B. Wilson, Appl. Phys. Lett., 54 (1989) 581.
6. Z. Han, U. Helmersson, T.I. Selinder and J.-E. Sundgren. Phys. Rev., B47 (1993) 3431.
7. T.S. Gau, S.L. Chang, H.H. Hung, C.H. Lee, T.W. Huang, H.B. Lu, S.J. Yang and S.E. Hsu, Appl. Phyx. Lett., 65 (1994) 1720.
8. S.W. Chan, M. Chopra, C.C. Chi, T. Frey and C.C. Tsuei, Appl. Phys. Lett., 63 (1993) 2964.
9. J.M. Triscone, M.G. Karkut, L. Antognazza, O. Brunner and Ø. Fischer, Phys. Rev. Lett., 63 (1989) 1016, and references therein.
10. Q. Li, X.X. Xi, X.D. Wu, A. Inam, S. Vadlamannti, W.L. McLean, T. Venkatesan, R. Ramesh, D.M. Hwang, J.A. Martinez, and L. Nazar, Phys. Rev. Lett., 64 (1990) 3086.
11. J.M. Triscone, Ø. Fischer, O. Brunner, L. Antognazza, A.D. Kent and M.G. Karkut, Phys. Rev. Lett., 64 (1990) 804.
12. U. Poppe, P. Prieto, J. Schubert, H. Soltner, K. Urban and C. Buchal, Solid State Commun., 71 (1989) 569.
13. D.H. Lowndes, D.P. Norton and J.D. Budai, Phys. Rev. Lett., 65 (1990) 1160.
14. A.P. Litvinchuk, C. Thomsen, I.E. Trofimov, H.-U. Habermeier and M. Cardona, Phys. Rev., B46 (1992) 14017.
15. E.E. Fullerton, J. Guimpel, O. Nakamura and I.K. Schuller. Phys. Rev. Lett., 69 (1992) 2859.
16. J. Li. Ke Qi Luo and C. de Gong. Appl. Phys. Lett., 64 (1994) 3329.
17. K. Horiuchi, M. Kanai, T. Kawai and S. Kawai, Phys. Rev., B45 (1992) 13 152.
18. K. Horiuchi, T. Kawai, S. Kawai, Y. Fujiwara and S. Hirotsu, Physica, C209 (1993) 531.
19. A. Gupta, R. Gross, E. Olsson, A. Segmüller, G. Koren and C.C. Tsuci, Phys. Rev. Lett., 64 (1990) 3191.
20. c Superconductor Thin Films, North-Holland, Amsterdam, 1992.
21. M. Guilloux-Viry, C. Thivet, A. Perrin, M. Sergent, M.G. Karkut, C. Rossel and A. Catana, J. Cryst. Growth, 132 (1993) 396.
22. W.L. Holstein, J. Appl. Phys., 74 (1993) 4963.
23. E. Anastassakis, J. Appl. Phys., 68 (1990) 4561; J. Cryst. Growth, 114 (1991) 647; J.M. Hinckley and J. Singh, Phys. Rev., B42 (1990) 3546; S.C. Jain and W. Hayes, Semicond. Sci. Technol., 6 (1991) 547.
24. E. Anastassakis, J. Appl. Phys., 68 (1990) 4561; J. Cryst. Growth, 114 (1991) 647; J.M. Hinckley and J. Singh, Phys. Rev., B42 (1990) 3546; S.C. Jain and W. Hayes, Semicond. Sci. Technol., 6 (1991) 547.
25. E. Anastassakis, J. Appl. Phys., 68 (1990) 4561; J. Cryst. Growth, 114 (1991) 647; J.M. Hinckley and J. Singh, Phys. Rev., B42 (1990) 3546; S.C. Jain and W. Hayes, Semicond. Sci. Technol., 6 (1991) 547.
26. E. Anastassakis, J. Appl. Phys., 68 (1990) 4561; J. Cryst. Growth, 114 (1991) 647; J.M. Hinckley and J. Singh, Phys. Rev., B42 (1990) 3546; S.C. Jain and W. Hayes, Semicond. Sci. Technol., 6 (1991) 547.
27. L. De Caro and L. Tapfer, Phys. Rev., B48 (1993) 2298; L. De Caro and L. Tapfer, Phys. Rev., R49 (1994) 11 127.
28. L. De Caro and L. Tapfer, Phys. Rev., B48 (1993) 2298; L. De Caro and L. Tapfer, Phys. Rev., R49 (1994) 11 127.
29. J. Hornstra and W.J. Bartels, J. Cryst. Growth, 44 (1978) 513.
30. J.F. Nye, Physical Properties of Crystals. Oxford University Press, Oxford, 1964, pp. 131-149.
31. M. Gusso, L. De Caro and E. Tapfer. Solid State Commun. 101 (1997) 665.
32. J.D. Jorgensen, B.W. Veal, A.P. Paulikas, L.J. Nowicki, G.W. Crabtree, H. Claus and W.K. Kwok, Phys. Rev., B41 (1990) 1863.
33. α with α denoting the layer of the heterostructure.
34. R. Ramesh, A. Inam, D.M. Hwang, T.S. Ravi, T. Sands, X.X. Xi, X.D. Wu, Q. Li, T. Venkatesan and R. Kilaas, J. Mater. Res., 6 (1991) 2264.
35. J. Haisma, J.A. Pistorius and D. Mateika, J. Cryst. Growth. 102 (1990) 979.
36. P. Contour, A. Défossez, D. Ravelosona, A. Albert and P. Ziemann, Z. Phys., B100 (1996) 185.
37. M. Lei, J.E. Sarrao, W.M. Visscher, T.M. Bell, J.D. Thompson, A. Migliori, U.W. Welp and B.W. Veal. Phys. Rev., B47 (1993) 6154.
38. S.K. Streiffer, B.M. Lairson, C.B. Eom, B.M. Clemens and J.C. Bravman, Phys. Rev., B43 (1991) 13007.
39. J. Horn, H.-C. Semmelhack, H. Böner, B. Lippold, U. Boehnke, M. Wurlitzer and M. Krötzsch. Physica. C170 (1990) 343.
40. A. Migliori, W.M. Visscher, S.E. Brown, Z. Fisk, S.W. Cheong, B. Alten, J.D. Maynard, Y. Huang, D.R. Kirk, K.A. Gillis, H.K. Kim and M.H.W. Chan, Phys. Rev., 841 (1990) 2098.