Porous silicon light-emitting diodes - Mechanisms in the operation

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 111-116

  Molnar K ^a   Mohacsy T ^a   Adam M ^a   Barsony I ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Electroluminescence; Equivalent circuit; Fowler Nordheim tunneling; Porous silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; INDIUM COMPOUNDS; POROUS SILICON; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS;

FOWLER-NORDHEIM TUNNELING; INDIUM TIN OXIDES;

LIGHT EMITTING DIODES;

EID: 0035361094     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00031-3     Document Type: Conference Paper

References (4)