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Volumn , Issue 9, 2003, Pages 1822-1827

The growth process, stability of GaP nanocrystals and formation of Ga3P nanocrystals under solvothermal conditions in benzene

(5) Gao, Shanmin a Lu, Jun a Zhao, Yan a Chen, Nan a Xie, Yi a

a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

Gallium; Nanostructures; Phosphides; Solvothermal synthesis

Indexed keywords

GALLIUM PHOSPHIDE; NANOCRYSTALS; OSTWALD RIPENING; PHOSPHORUS COMPOUNDS;

GROWTH PROCESS; OSTWALD RIPENING MECHANISM; PHOSPHIDE; PROCESS STABILITY; PROLONGED REACTION; REACTION TEMPERATURE; SOLVOTHERMAL CONDITIONS; SOLVOTHERMAL SYNTHESIS; XRD;

III-V SEMICONDUCTORS;

BENZENE; GALLIUM; PHOSPHORUS DERIVATIVE;

ANALYTIC METHOD; ARTICLE; CRYSTAL STRUCTURE; ENERGY DISPERSIVE X RAY DIFFRACTION; REACTION TIME; TEMPERATURE DEPENDENCE; THERMAL ANALYSIS; THERMOSTABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0037907302 PISSN: 14341948 EISSN: None Source Type: Journal
DOI: 10.1002/ejic.200200647 Document Type: Article

Times cited : (14)

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