Visualization of vacancy type defects in the RP/2 region of ion implanted and annealed silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 71-75

  Peeva, A ^a   Koegler, R ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Defects; Electron microscopy; Gettering; Ion implantation; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY; VISUALIZATION;

ION-MILLING;

SEMICONDUCTING SILICON;

EID: 0037906152     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00723-7     Document Type: Conference Paper

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