A batch process to deposit amorphous metallic Mo-Si-N films

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 5-7, 2003, Pages 427-430

  Kattelus, H ^a   Heikkinen, H ^a   Haara A ^a   Ylonen M ^a   Tolkki, A ^a  

^a VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON DIFFRACTION; MICROELECTROMECHANICAL DEVICES; MOLYBDENUM; MOLYBDENUM ALLOYS; POLYCRYSTALLINE MATERIALS; SILICON; SPUTTERING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS METALLIC ALLOY; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FILM RESISTIVITY; FILM THICKNESS; POLYCRYSTALLINE MOLYBDENUM FILM;

AMORPHOUS FILMS;

EID: 0037811379     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1023925423733     Document Type: Article

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