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Volumn , Issue , 2003, Pages 315-318
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Atomic hydrogen-assisted selective MBE growth of hexagonal InGaAs ridge quantum wire networks having a high density of giga-nodes/cm2
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL ORIENTATION;
DENSITY (SPECIFIC GRAVITY);
ELECTRON BEAM LITHOGRAPHY;
EPITAXIAL GROWTH;
ETCHING;
MOLECULAR BEAM EPITAXY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM PHOSPHIDE;
ARSENIC COMPOUNDS;
CHEMICALS;
CRYSTALLIZATION;
ELECTRON BEAMS;
GALLIUM ARSENIDE;
GALLIUM PHOSPHIDE;
HYDROGEN;
INDIUM;
INDIUM COMPOUNDS;
INDIUM PHOSPHIDE;
IRRADIATION;
LITHOGRAPHY;
NANOWIRES;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR QUANTUM WIRES;
WET ETCHING;
ATOMIC HYDROGEN;
HEXAGONAL RIDGE QUANTUM WIRE NETWORKS;
PERIODIC HEXAGONAL PATTERNS;
WET CHEMICAL ETCHING;
SEMICONDUCTOR QUANTUM WIRES;
WIRE;
HEXAGONAL NETWORKS;
HEXAGONAL PATTERN;
HIGH-CRYSTALLINE QUALITY;
INDIUM GALLIUM ARSENIDE;
QUANTUM WIRE NETWORKS;
RIDGE STRUCTURES;
SELECTIVE MBE GROWTH;
SPATIAL UNIFORMITY;
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EID: 0037810820
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (3)
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References (12)
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