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Volumn 1, Issue , 2003, Pages

A 1V fully differential CMOS LNA for 2.4 GHz application

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITORS; ELECTRIC POTENTIAL; INTEGRATION; TRANSISTORS;

EID: 0037775593     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (10)

References (11)
  • 4
    • 0032123968 scopus 로고    scopus 로고
    • The impact of scaling down to deep submicro on CMOS RF circuit
    • July
    • Q.Huang, F. Piazza, P. Orsatti, and T. Ohguro, "The Impact of Scaling Down to Deep Submicro on CMOS RF Circuit," IEEE Journal of Solid State Circuits, Vol. 33, No. 7, pp. 1023-1036, July 1998.
    • (1998) IEEE Journal of Solid State Circuits , vol.33 , Issue.7 , pp. 1023-1036
    • Huang, Q.1    Piazza, F.2    Orsatti, P.3    Ohguro, T.4
  • 6
    • 0029492704 scopus 로고    scopus 로고
    • A 1.9GHz low voltage silicon bipolar receiver front-end for wireless personal communications systems
    • J. R. Long and M. A. Copeland, "A 1.9GHz Low Voltage Silicon Bipolar Receiver Front-end for Wireless Personal Communications Systems," IEEE Journal of Solid State Circuits, Vol. 30, pp. 1438-1448, 1996.
    • (1996) IEEE Journal of Solid State Circuits , vol.30 , pp. 1438-1448
    • Long, J.R.1    Copeland, M.A.2
  • 7
  • 8
    • 0035848676 scopus 로고    scopus 로고
    • Low-voltage CMOS low-noise amplifier using planar-interleaved transformer
    • April
    • C.-C. Tang and S.-I. Liu, "Low-voltage CMOS Low-noise Amplifier using planar-interleaved transformer," Electronics Letters. Vol. 37, No. 8, pp. 497-498, April 2001.
    • (2001) Electronics Letters , vol.37 , Issue.8 , pp. 497-498
    • Tang, C.-C.1    Liu, S.-I.2
  • 9
    • 0035475107 scopus 로고    scopus 로고
    • Low-voltage 1.9-GHz front-end receiver in 0.5-μm CMOS technology
    • October
    • E. A. Allam, J. J. Nisbet, and M. C. Malieparrd, "Low-Voltage 1.9-GHz Front-End Receiver in 0.5-μm CMOS Technology," IEEE Journal of Solid State Circuits, Vol.36, No.10, pp. 1434-1443, October 2001.
    • (2001) IEEE Journal of Solid State Circuits , vol.36 , Issue.10 , pp. 1434-1443
    • Allam, E.A.1    Nisbet, J.J.2    Malieparrd, M.C.3
  • 11
    • 0033334643 scopus 로고    scopus 로고
    • Low dc power Si-MOSFET L- and C- band low noise amplifier fabricated by SIMOX technology
    • March
    • M. Harada, and T. Tsukahara, "Low dc Power Si-MOSFET L- and C- Band Low Noise Amplifier Fabricated by SIMOX Technology," IEICE Transcation on ELECTRON., Vol.E82-C, No.3, pp. 553-558, March 1999.
    • (1999) IEICE Transcation on ELECTRON , vol.E82-C , Issue.3 , pp. 553-558
    • Harada, M.1    Tsukahara, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.