Strain-driven composition gradients in nanocrystalline SiGe

Applied Physics Letters

Volumn 82, Issue 26, 2003, Pages 4681-4683

  Tzoumanekas, C ^a,b   Kelires, P C ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF COMPUTER SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRAIN; STRESS ANALYSIS;

STRESS FIELDS;

NANOSTRUCTURED MATERIALS;

EID: 0037767882     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1586780     Document Type: Article

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11. The simulated density of the amorphous network is ∼3%-4% lower than the crystalline density.