Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 168, Issue 3, 2000, Pages 399-403

  Joo, M H ^a   Park, K M ^a   Choi, W Y ^a   Song, J H ^b   Im, S ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; DOSIMETRY; ELECTRIC BREAKDOWN; GOLD; SCHOTTKY BARRIER DIODES; SILICON; THERMAL EFFECTS;

BORON ION IMPLANTATION; CURRENT LEAKAGE; EDGE TERMINATION; ION DOSE; ION ENERGIES;

ION IMPLANTATION;

EID: 0033704501     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)01093-9     Document Type: Article

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