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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 613-617

Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes

(5) Choi, C S a Choi, W Y a Joo, M H a Song, J H b Im, S a

a Yonsei University (South Korea)

b Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

EDGE TERMINATION;

ION IMPLANTATION;

EID: 0036505039 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1458953 Document Type: Article

Times cited : (4)

References (16)

1
- 0027928830
- (1994) IEEE Applied Power Electronics Conference , pp. 17
- Blake, C.¹ Kinzer, D.² Wood, P.³

2
- 0024737721
- (1989) IEEE Trans. Electron Devices , vol.5 , pp. 1811
- Shenari, K.¹ Scott, R.S.² Baliga, B.J.³

3
- 0026154377
- (1991) Proc. IEEE , vol.79 , pp. 598
- Trew, R.J.¹ Yan, J.² Mock, P.M.³

4
- 21544461610
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoc, H.¹ Strite, S.² Gao, G.B.³ Lin, M.E.⁴ Sverdlov, B.⁵ Burns, M.⁶

5
- 0030270183
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1732
- Weitzel, C.E.¹ Palmour, J.W.² Carter C.H., Jr.³ Moore, K.⁴ Nordquist, K.J.⁵ Allen, S.⁶ Thero, C.⁷ Bhatnagar, M.⁸

6
- 0003805738
- Wiley, New York
- (1986) Device Electronics for Integrated Circuits
- Muller, R.S.¹ Kamins, T.I.²

7
- 0003757116
- PWS, Boston
- (1995) Power Semiconductor Devices
- Baliga, B.J.¹

8
- 0028531328
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 394
- Alok, D.¹ Baliga, B.J.² MacLarty, P.K.³

9
- 0030216388
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1315
- Alok, D.¹ Raghunathan, R.² Baliga, B.J.³

10
- 0033897007
- (2000) Mater. Sci. Eng., B , vol.71 , pp. 224
- Joo, M.H.¹ Lee, K.H.² Song, J.H.³ Im, S.⁴

11
- 0033704501
- (2000) Nucl. Instrum. Methods Phys. Res. B , vol.168 , pp. 399
- Joo, M.H.¹ Park, K.M.² Choi, W.Y.³ Song, J.H.⁴ Im, S.⁵

12
- 0030107490
- (1996) IEEE Electron Device Lett. , vol.17 , pp. 139
- Itoh, A.¹ Kimoto, T.² Matsunami, H.³

13
- 0023961148
- (1988) IEEE Trans. Comput.-Aided Des. , vol.7 , pp. 174
- Hobler, G.¹ Selberherr, S.²

14
- 0025207696
- (1990) IEEE Electron Device Lett. , vol.11 , pp. 42
- Crandle, T.L.¹ Mulvaney, B.J.²

15
- 0008884778
- TSUPREM-4 (Technology Modeling Associate, Inc., Sunnyvale, CA, February)
- (1997) Two-Dimensional Process Simulation Program, Version 6.5, User's Manual

16
- 0004497861
- MEDICI (Technology Modeling Associate, Inc., Sunnyvale, CA, October)
- (1997) Two-Dimensional Device Simulation Program, Version 4.0, User's Manual

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