Process-induced defects and potential distribution in nearly ideal Au/Si Schottky barriers

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 198-202

  Maeda, Keiji ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Defect; Inhomogeneity; Potential distribution; Schottky barrier; Silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; INTERFACES (MATERIALS); IONIZATION; SEMICONDUCTING SILICON;

DEFECT DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0037732995     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00437-9     Document Type: Conference Paper

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