Negatively charged insulator-semiconductor structure: Concepts, technological considerations and applications

Solid-State Electronics

Volumn 44, Issue 1, 2000, Pages 111-116

  Konig D ^a   Ebest, G ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC INSULATING MATERIALS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MISFET DEVICES; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

INSULATOR-SEMICONDUCTOR (IS) STRUCTURES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0038740838     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00214-2     Document Type: Article

References (12)

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3. Jaeger K., Hezel R. Optical stability of silicon nitride MIS inversion layer solar cells. IEEE Transactions on ED. 32:1985;1824.
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5. 3 thin films. Journal of Applied Physics. 84:(12):1998;6747.
6. FHI für angewandte Optik und Feinmechanik Jena, Germany. Internal report, 1999.
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8. Calculated from Landolt-Börnstein, New Series, Vol. III, part 6, p. 1.
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12. König D., Ebest G. Novel thin film solar cell model with two antipolar MIS structures. Solar Energy Materials and Solar Cells. 56:1998;67.