Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Pala, N ^a   Gaska, R ^a   Shur, M ^a   Yang, J W ^a   Khan, M Asif ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

ALUMINUM GALLIUM NITRIDE; HOOGE PARAMETER;

HETEROJUNCTIONS;

EID: 0033717570     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)