Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFET's

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2003, Pages 99-102

  Lai, H C ^a   Zous, N K ^a   Tsai, W J ^a   Lu, T C ^a   Wang, Tahui ^a   King, Y C ^a   Pan, Sam ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; SUBSTRATES;

CHARGE PUMPING (CP) METHODS;

MOSFET DEVICES;

EID: 0037628110     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Pascal Massen, Jean-Luc Autran, and Jean Brini," On the Tunneling Component of Charge Pumping Current in Ultrathin Gate Oxide MOSFET's" IEEE Elect. Dev. Lett., Vol. 20, 1999, pp. 92-94.
2. S. S. Chung, S. J. Chen, C. K. Yang, S. M. Cheng, S. H. Lin and F. Wen, "A Novel and Direct Determination of the Interface Traps in Sub-100nm CMOS Device with Direct Tunneling Regime (12-16A) Gate Oxide" in Symp. on VLSI Tech. Dig., 2002, pp. 74-75.
3. G. Groeseneken, H. E. Maes, N. Beltran, and R. DeKeersmaecker, "A Reliable Approach to Charge-Pumping Measurements in MOS Transistors" IEEE Trans. Elect Dev., Vol. 31, 1984, pp. 42-53.
4. Y. Shi, T. P. Ma, S. Prasad and S. Dhanda," Polarity Dependent Gate Tunneling Currents in Dual-Gate CMOSFETs," IEEE Trans. Elect. Dev.,Vol. 45, 1998, pp.2355-2360.
5. Paul Heremans, Johan Witters, Guido Groeseneken, Herman E. Maes, "Analysis of the Charge Pumping Technique and Its Application for the Evaluation of MOSFET Degradation" IEEE, Trans. Elec, Dev., Vol. 36, 1989, pp, 1318-1335
6. T. Ohguro, T. Nagano, M. Fujiwara, M. Takayanagi, T. Shimizu, H. S. Monose, S. Nakamura, "A study of analog characteristics of CMOS with heavily nitrided NO oxynitrides" in Symp. on VLSI Tech. Dig., 2001, pp. 91-92.