Difference between staying and diffusing Si adsorbates on the Si(1 1 1)7 × 7 surface

Surface Science

Volumn 532-535, Issue , 2003, Pages 737-745

  Uchida, Hironaga ^a   Watanabe, Satoshi ^b   Kuramochi, Hiromi ^c   Kishida, Masaru ^a   Kim, Jooyoung ^a   Nishimura, Kazuhiro ^a   Inoue, Mitsuteru ^a   Aono, Masakazu ^c  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Ab initio quantum chemical methods and calculations; Chemisorption; Scanning tunneling microscopy; Semi empirical models and model calculations; Silicon; Surface diffusion

Indexed keywords

ADSORBENTS; CARRIER CONCENTRATION; DEPOSITION; DIFFUSION; MOLECULAR DYNAMICS; SCANNING TUNNELING MICROSCOPY; SILICON;

SURFACE DIFFUSION;

SURFACE PHENOMENA;

EID: 0037508530     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00451-5     Document Type: Conference Paper

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