Analysis of single Si atoms deposited on the Si(111)7×7 surface

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 73-78

  Uchida, H ^a   Watanabe, S ^b   Mase, M ^a   Kuramochi, H ^c   Aono, M ^c  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; MOLECULAR DYNAMICS; SCANNING TUNNELING MICROSCOPY;

SEMI-EMPIRICAL MOLECULAR ORBITAL CALCULATION;

SEMICONDUCTING SILICON;

EID: 0034224154     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00838-5     Document Type: Article

References (15)

1. Lyo I.-W., Avouris P. Science. 253:1991;173.
2. Huang D.H., Uchida H., Aono M. Jpn. J. Appl. Phys. 31:1992;4503.
3. Uchida H., Huang D.H., Yoshinobu J., Aono M. Surf. Sci. 287/288:1993;1056.
4. Uchida H., Huang D.H., Gery F., Aono M. Phys. Rev. Lett. 70:1993;2040.
5. Komeda T., Hasunuma R., Mukaida H., Tokumoto H. Appl. Phys. Lett. 68:1996;3482.
6. Stipe B.C., Rezaei M.A., Ho W. Phys. Rev. Lett. 79:1997;4397.
7. Watanabe S., Huang D.H., Uchida H., Aono M. 22nd Int. Conf. Phys. Semiconductors. 1995;513 World Scientific, Singapore.
8. Koehler U., Demuth J.E., Hamers R.J. J. Vac. Sci. Technol. A7:1989;2860.
9. Huang D.H., Uchida H., Aono M. J. Vac. Sci. Technol. B12:1994;2429.
10. Takayanagi K., Tanishiro Y., Takahashi M., Takahashi S. Surf. Sci. 164:1985;367.
11. Brommer K.D., Needles M., Larson B.E., Joannopoulos J.D. Phys. Rev. Lett. 68:1992;1355.
12. Dewer M.J.S., Zoebisch E.G., Healy E.F., Stewart J.J.P. J. Am. Chem. Soc. 107:1985;3902.
13. Walkow R.A., Lopinski G.P., Moffatt D.J. Surf. Sci. 416:1998;L1107.
14. Isshiki N., Kobayashi K., Tsukada M. Surf. Sci. Lett. 238:1990;L439.
15. Watanabe S., Aono M., Tsukada M. Phys. Rev. B44:1991;8330.