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Volumn 207, Issue 2, 2003, Pages 175-185
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The impact of low energy proton damage on the operational characteristics of EPIC-MOS CCDs
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Author keywords
Charge transfer inefficiency; Charge coupled device; Metal oxide semiconductor; Proton damage
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Indexed keywords
CHARGE TRANSFER;
MOS DEVICES;
PROTONS;
CHARGE TRANSFER INEFFICIENCY (CTI);
CHARGE COUPLED DEVICES;
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EID: 0037508501
PISSN: 0168583X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-583X(03)00832-2 Document Type: Article |
Times cited : (12)
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References (17)
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