45° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Si

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4125-4127

  Yoo, Y Z ^a   Ahmet, P ^a   Jin, Zheng Wu ^a   Nakajima, K ^a   Chikyow, T ^a   Kawasaki, M ^b   Konishi, Y ^c   Yonezawa, Y ^c   Song, J H ^d   Koinuma, H ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c FUJI ELECTRIC CO   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); STACKING FAULTS; STRONTIUM COMPOUNDS; SULFUR COMPOUNDS;

ROTATIONAL EPITAXY;

THIN FILMS;

EID: 0037491251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581383     Document Type: Article

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