Integration and electrical properties of novel ferroelectric capacitors for 0.25 μm 1 transistor 1 capacitor ferroelectric random access memory (1T1C FRAM)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2635-2638

  Song, Y J ^a   Jang, N W ^a   Jung, D J ^a   Kim, H H ^a   Joo, H J ^a   Lee, S Y ^a   Lee, K M ^a   Joo, S H ^a   Park, S O ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

0.25 m design rule; 32Mb FRAM; Ferroelectric

Indexed keywords

ETCHING; FERROELECTRIC DEVICES; POLARIZATION; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING;

0.25 ΜM DESIGN RULE; 32MB FRAM; FERROELECTRIC CAPACITORS;

CAPACITORS;

EID: 0037479082     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2635     Document Type: Article

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