A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 415-420

  Marlafeka, S ^a   Bock, N ^a   Cheng, T S ^a   Novikov, S V ^a   Winser, A J ^a   Harrison, I ^a   Foxon, C T ^a   Brown, P D ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; LOW TEMPERATURE PRODUCTION; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM FLUX;

SEMICONDUCTING FILMS;

EID: 0035451527     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01242-8     Document Type: Article

References (16)