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Volumn 15, Issue 2, 2003, Pages 55-66
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Surface photovoltage spectroscopy as a valuable nondestructive characterization technique for GaAs/GaAlAs vertical-cavity surface-emitting laser structures
a a a b b b b c d |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON TRANSITIONS;
EXCITONS;
LIGHT EMISSION;
MIS DEVICES;
REFLECTOMETERS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
SPECTROSCOPY;
SURFACES;
TEMPERATURE;
ANGEL DEPENDENT REFLECTANCE MEASUREMENTS;
CAVITY MODE;
HEAVY HOLE EXCITONIC TRANSITION;
SURFACE PHOTOVOLTAGE SPECTROSCOPY;
VERTICAL CAVITY SURFACE EMITTING LASER STRUCTURES;
SEMICONDUCTOR LASERS;
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EID: 0037460360
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/15/2/306 Document Type: Article |
Times cited : (10)
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References (27)
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