Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity

Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 871-874

  Moneger, S ^a   Qiang, H ^a   Pollak, F H ^a   Mathine, D L ^b   Droopad, R ^b   Maracas, G N ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; INTERDIFFUSION (SOLIDS); LASER RESONATORS; OSCILLATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY; THERMAL EFFECTS;

BERYLLIUM INTERDIFFUSION; CONTACTLESS ELECTROREFLECTANCE CHARACTERIZATION; FRANZ KELDYSH OSCILLATIONS; LASING SPECTRUM; WELL WIDTH;

QUANTUM WELL LASERS;

EID: 0030167613     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00388-6     Document Type: Article

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