Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure

Applied Physics Letters

Volumn 80, Issue 5, 2002, Pages 752-754

  Liang, J S ^a   Wang, S D ^a   Huang, Y S ^a   Tien, C W ^b   Chang, Y M ^b   Chen, C W ^b   Li, N Y ^b   Lin, D Y ^c   Pollak, Fred H ^d  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b Kingmax Optoelectronics Inc   (Taiwan)

^c NAN KAI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^d CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; AL COMPOSITION; AS-GROWN; CAVITY MODE; CONTACT LESS; GAAS; HIGHER ORDER; MATERIAL QUALITY; NIR SPECTRUM; NONDESTRUCTIVE CHARACTERIZATION; PHOTOVOLTAGE SPECTROSCOPY; QUANTUM WELL; ROOM TEMPERATURE; STRUCTURE PARAMETER; THEORETICAL CALCULATIONS; VERTICAL-CAVITY SURFACE EMITTING LASER;

EXTRATERRESTRIAL ATMOSPHERES; INFRARED DEVICES; QUANTUM WELL LASERS; REFLECTION; SEMICONDUCTING GALLIUM; SURFACE STRUCTURE;

SURFACE EMITTING LASERS;

EID: 79956045613     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1445463     Document Type: Article

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