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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 3, 2002, Pages 353151-353159

Adsorption of O2 on Si(111)7×7 at 300 and 30 K studied by ion photodesorption and electron photoemission

(4) Comtet, G a Hellner, L a Dujardin, G a Bobrov, K a

a UNIVERSITÉ PARIS SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

OXYGEN; SILICON; SILICON DERIVATIVE; SILICON TETRAOXIDE; UNCLASSIFIED DRUG;

ADSORPTION; ANALYTIC METHOD; ARTICLE; ATOM; DESORPTION; DISSOCIATION; ELECTRON PHOTOEMISSION; ELECTRON RADIATION; ION PHOTODESORPTION; MOLECULAR STABILITY; OXIDATION; STRUCTURE ANALYSIS; TEMPERATURE DEPENDENCE;

EID: 0037080645 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (26)

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