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Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 381-385

Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces

(9) Pages O a Erguig, H b Wagner, V c Zaoui, A a Laurenti, J P a Gueurts, J c Aourag, H d Aulombard, R L e Certier, M a

a UNIVERSITÉ DE LORRAINE (France)

b MOHAMMED V UNIVERSITY (Morocco)

c UNIVERSITY OF WÜRZBURG (Germany)

d UNIVERSITY OF SIDI BEL ABBES (Algeria)

e UNIV MONTPELLIER (France)

Author keywords

Heterostructures; Photoreflectance; Raman spectroscopy; ZnSe

Indexed keywords

ACTIVATION ENERGY; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ENERGY GAP; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS;

ELECTRIC-FIELD-INDUCED RAMAN SCATTERING (EFIRS); ELECTRONIC BAND BENDING; FRANZ-KELDYSCH OSCILLATIONS; PHOTOREFLECTANCE; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0032320945 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)01257-7 Document Type: Article

Times cited : (3)

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