Temperature induced resonant Raman scattering of MOVPE grown ZnSxSel-x/GaAs( 100) heterostructures

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 767-771

  Schneider, A ^a   Drews, D ^a   Sollner J ^b   Heuken, M ^b   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH;

TEMPERATURE INDUCED RESONANT RAMAN SCATTERING;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030687216     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00605-7     Document Type: Article

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