메뉴 건너뛰기




Volumn 44, Issue 2, 2002, Pages 359-370

Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC

Author keywords

Bubbles; Chemical vapor deposition; CO2 gas; Linear parabolic; Parabolic; Silicon carbide

Indexed keywords

ACTIVATION ENERGY; BUBBLE FORMATION; CHEMICAL VAPOR DEPOSITION; OXIDATION; OXYGEN; PARTIAL PRESSURE; PRESSURE EFFECTS; REACTION KINETICS;

EID: 0036466971     PISSN: 0010938X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0010-938X(01)00066-X     Document Type: Article
Times cited : (42)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.