The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

Journal of Applied Physics

Volumn 93, Issue 6, 2003, Pages 3564-3571

  Nedjalkov, M ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY VALUE PROBLEMS; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; MONTE CARLO METHODS; PARTICLE SIZE ANALYSIS; RANDOM PROCESSES; TRANSPORT PROPERTIES;

BOLTZMAN EQUATIONS;

SEMICONDUCTOR DEVICE TESTING;

EID: 0037444846     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1544655     Document Type: Article

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