Efficiency and stochastic error of Monte Carlo device simulations

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 109-111

  Jungemann, C ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ERROR ANALYSIS; LAPLACE TRANSFORMS; MONTE CARLO METHODS;

STOCHASTIC ERRORS;

SEMICONDUCTOR DEVICES;

EID: 0034453419     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. Understanding hot-electron transport in silicon devices: Is there a shortcut?
2. Convergence estimation for stationary ensemble Monte Carlo simulations
3. Fluctuations from the nonequilibrium steady state
4. An extended proof of the Ramo-Shockley theorem
5. Optimized terminal current calculation for Monte Carlo device simulation
6. Langevin noise sources for the Boltzmann transport equations with the relaxation-time approximation in nondegenerate semiconductors
7. The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
8. Network sensitivity and noise analysis simplified
9. An efficient approach to noise analysis through multidimentional physics-based models
10. Efficient full-band Monte Carlo simulation of silicon devices
11. Microscopic simulation of electronic noise in semiconductor materials and devices