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Volumn 67, Issue 3, 2003, Pages 353271-353275

Absolute In coverage and bias-dependent STM images of the Si(111)4x1-In surface

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ARTICLE; CONTRAST ENHANCEMENT; DATA ANALYSIS; ELECTRON DIFFRACTION; IMAGE ANALYSIS; MEASUREMENT; PHASE TRANSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY; X RAY DIFFRACTION;

EID: 0037438266     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (33)

References (33)
  • 28
    • 0031550966 scopus 로고    scopus 로고
    • 2 on Si(100). The standard deviation of the system calibration factors determined from the three reference samples is about 10%. Details of the system description and MEIS composition analysis are found in Ref. 24 and D.W. Moon et al., Nuct. Instrum. Methods Phys. Res. B 125, 120 (1997).
    • (1997) Nuct. Instrum. Methods Phys. Res. B , vol.125 , pp. 120
    • Moon, D.W.1
  • 29
  • 30
    • 0028763270 scopus 로고
    • G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11 169 (1996); G. Kresse et al. J. Cryst. Growth 6, 8245 (1994).
    • (1994) J. Cryst. Growth , vol.6 , pp. 8245
    • Kresse, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.