Anisotropic electronic structure of the Si(111)−(4 × 1)in surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 19, 2001, Pages

  Nakamura, Jun ^a,e   Watanabe, Satoshi ^b   Aono, Masakazu ^a,c,d  

^a RIKEN   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

ANISOTROPY; ARTICLE; CALCULATION; ENERGY; INFRARED RADIATION; MODEL; STRUCTURE ANALYSIS; SURFACE PROPERTY; X RAY DIFFRACTION;

EID: 0000786444     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.193307     Document Type: Article

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