Properties of MOCVD deposits using novel Sn(II) neo-pentoxide precursors

Chemistry of Materials

Volumn 15, Issue 3, 2003, Pages 765-775

  Boyle, Timothy J ^a   Ward, Timothy L ^b   De'Angeli, Sacha M ^a   Xu, Huifang ^c   Hammetter, William F ^a  

^a ADVANCED MATERIALS LABORATORY   (United States)

^b University of New Mexico   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEOPENTOXIDE; OXIDE; TIN DERIVATIVE; TIN OXIDE; UNCLASSIFIED DRUG;

ARTICLE; CRYSTAL STRUCTURE; DECOMPOSITION; DIFFERENTIAL SCANNING CALORIMETRY; DRY DEPOSITION; FILM; HYDROLYSIS; MELTING POINT; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL CHEMISTRY; SCANNING ELECTRON MICROSCOPY; THERMOGRAVIMETRY; TRANSMISSION ELECTRON MICROSCOPY; VAPORIZATION; VOLATILIZATION; X RAY DIFFRACTION;

EID: 0037431973     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm020893p     Document Type: Article

References (27)

1. Gallegos, J. J. I.; Ward, T. L.; Boyle, T. J.; Francisco, L. P.; Rodriguez, M. A. Adv. Mater. CVD 2000, 6, 21.
2. Koh, S. K.; Jung, H. J.; Song, S. K.; Choi, W. K.; Choi, D.; Jeon, J. S. U.S. Patent 6059937, 2000.
3. Chou, J. C.; Chung, W.-Y.; Hsiung, S.-K.; Sun, T.-P.; Liao, H.-K. U.S. Patent 6218208, 2001.
4. Koh, S. K.; Jung, H. J.; Song, S. K.; Choi, W. K.; Choi, D.; Jeon, J. S. U.S. Patent 5989990, 1999.
5. Chang, S.-C. U.S. Patent 4169369, 1979.
6. Abbas, M. N.; Moustafa, G. A.; Gopel, T. V. Anal. Chim. Acta 2001, 4331, 181.
7. Chaudhary, B. A.; Mulla, I. S.; Vijayamohanan, K.; Hegde, S. G.; Srinivas, D. J. Phys. Chem. B 2001, 105, 2565.
8. Gregory, O. J.; Luo, Q. Sens. Actuators, A 2001, 88, 234.
9. Hellegouarc'h, F.; Arefi-Khonsari, F.; Planade, R.; Amouroux, J. Sens. Actuators B 2001, 73, 27.
10. Tarabek, J.; Wolter, M.; Rapta, P.; Plieth, W.; Maumy, M.; Dunsch, L. Macromol. Symp. 2001, 164, 219.
11. Yoshimi, Y.; Ohdira, R.; Iiyama, C.; Sakai, K. Sens. Actuators B 2001, 73, 49.
12. Amin, N.; Isaka, T.; Yamada, A.; Konagai, M. Sol. Energy Mater. Sol. Cells 2001, 67, 195.
13. Veluchamy, P.; Tsuji, M.; Nishio, T.; Aramoto, T.; Higuchi, H.; Kumazawa, S.; Shibutani, S.; Nakajima, J.; Arita, T.; Ohyama, H. Sol. Energy Mater. Sol. Cells 2001, 67, 179.
14. Yater, J. C.; Yater, J. A.; Yater, J. E. U.S. Patent 5889287, 1999.
15. Chadha, S. S.; Alwan, J. J. U.S. Patent 5695809, 1997.
16. Mohamedi, M.; Lee, S. J.; Takahashi, D.; Nishizawa, M.; Itoh, T.; Uchida, I. Electrochim. Acta 2001, 46, 1161.
17. Nam, S. C.; Yoon, Y. S.; Cho, W. I.; Cho, B. W.; Chun, H. S.; Yun, K. S. Electrochem. Commun. 2001, 3, 6.
18. Nam, S. C.; Yoon, Y. S.; Cho, W. I.; Cho, B. W.; Chun, H. S.; Yun, K. S. J. Electrochem. Soc. 2001, 148, A220.
19. Kane, J.; Schweizer, H. P.; Kern, W. J. Electrochem. Soc. 1975, 122, 1144.
20. Maruyama, T.; Ikuta, Y. Sol. Energy Mater. Sol. Cells 1992, 28, 209.
21. Maruyama, T.; Tabata, K. J. Appl. Phys. 1990, 68, 4282.
22. Suh, S.; Hoffman, D. M.; Atagi, L. M.; Smith, D. C.; Liu, J.-R.; Chu, W.-K Chem. Mater. 1997, 9, 730.
23. Houlton, D. J.; Jones, A. C.; Hycock, P. W.; Williams, E. W.; Bull, J.; Critchlow, G. W. Chem. Vap. Deposition 1995, 1, 26.
24. Brown, J. R.; Cheney, M. T.; Hycock, P.; Houlton, D. J.; Jones, A. C.; Williams, E. W. J. Electrochem. Soc. 1997, 144, 295.
25. Boyle, T. J.; Alam, T. M.; Rodriguez, M. A.; Zechmann, C. A. Inorg. Chem. 2002, 41, 25742.
26. Wagner, R. S.; Ellis, W. C. Appl. Phys. Lett. 1964, 4, 89.
27. Hu, J.; Odom, T. W.; Lieber, C. M. Acct. Chem. Res. 1999, 32, 435.