Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

Applied Physics Letters

Volumn 82, Issue 6, 2003, Pages 988-990

  Garrido, J A ^a   Nebel, C E ^a   Todt, R ^a   Rosel G ^a   Amann, M C ^a   Stutzmann, M ^a   Snidero, E ^b   Bergonzo, P ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); HYDROGENATION; LEAKAGE CURRENTS; OHMIC CONTACTS; OXIDATION;

IN-PLANE TRANSISTORS;

DIAMONDS;

EID: 0037428818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1545152     Document Type: Article

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