A cross-corner effect in a rectangular sputtering magnetron

Journal of Physics D: Applied Physics

Volumn 36, Issue 3, 2003, Pages 244-251

  Fan, Qi Hua ^a   Zhou, Li Qin ^a   Gracio, J J ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; IONIZATION; MAGNETIC FIELDS; MONTE CARLO METHODS; RUNGE KUTTA METHODS;

ELECTRON DRIFT VELOCITY; ELECTRON TRAJECTORIES; IONIZATION DISTRIBUTION;

MAGNETRON SPUTTERING;

EID: 0037423503     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/3/305     Document Type: Article

References (34)

1. Fraser D B 1978 J. Vac. Sci. Technol. 15 178
2. Chapin J S 1979 Sputtering process and apparatus United States Patent 4, 166, 018, August 28
3. Abe K, Kobayyashi S, Kamel T, Shimizu T, Tateishi H and Aiuchi S 1982 Thin Solid Films 96 225
4. Garrett C B 1984 Planar magnetron sputtering device United States Patent 4,444,643, April 24
5. Morrison C F Jr. 1984 Magnetically enhanced sputtering device having a plurality of magnetic field sources including improved plasma trapping device and method United States Patent 4,461,688, July 24
6. Cuomo J J and Rossnagel S M 1986 J. Vac. Sci. Technol. A 4 393
7. Aichert H, Kieser J and Kukla R 1986 Magnetron cathode for sputtering ferromagnetic targets United States Patent 572,776, Fabruary 25
8. Rossnagel S M and Kaufman H R 1988 J. Vac. Sci. Technol. A 6 223
9. Welty R P 1990 Magnetron sputtering cathode United States Patent 4,892,633, January 9
10. Howson R P and Ja'fer H A 1992 J. Vac. Sci. Technol. A 10 1784
11. Wasa K and Hayakawa S 1992 Handbook of Sputter Deposition Technology (New York: Noyes Publications)
12. Ido S and Nakamura K 1993 Japan. J. Appl. Phys. 32 5698
13. Fan Q H, Hong Y, Chen H and Chen X 1993 Thin Solid Films 229 51
14. Turner G M, Rossnagel S M and Cuomo J J 1994 J. Appl. Phys. 75 3611
15. Hosokawa N and Kobayashi T 1995 Magnetron sputtering cathode apparatus United States Patent 5,458,759, October 17
16. Manley B W 1999 Apparatus and method for a magnetron cathode with moving magnet assembly United States Patent 5,980,707, November 9
17. Musil J 1999 J. Vac. Sci. Technol. A 17 555
18. Powell R A and Rossnagel S M 1999 PVD for Microelectronics: Sputter Deposition Applied to Semiconductor Manufacturing (San Diego: Academic)
19. Tepman A 2001 Magnetron for low pressure, full face erosion United States Patent 6,228,235, May 8
20. Haas D, Buschbeck W and Krempel-Hesse J 2001 Sputtering device with a cathode with permanent magnet system United States Patent 6,207,028, March 27
21. Shidoji E, Nemoto M and Nomura T 2000 J. Vac. Sci. Technol. A 18 2858
22. Sheridan T E, Goeckner M J and Goree J 1990 J. Vac. Sci. Technol. A 8 30
23. Miranda J E, Goeckner M J, Goree J and Sheridan T E 1990 J. Vac. Sci. Technol. A 8 1627
24. Goree J and Sheridan T E 1991 Appl. Phys. Lett. 59 1052
25. Ido S and Nakamura K 1993 Japan. J. Appl. Phys. 32 5698
26. Kondo S and Nanbu K 1999 J. Phys. D: Appl. Phys. 32 1142
27. Shidoji E, Ohtake H, Nakano N and Makabe T 1999 Japan. J. Appl. Phys. Pt.1, 38 2131
28. Shohet J L 1971 The Plasma State (New York: Academic) p 39
29. Rossnagel S M and Kaufman H R 1987 J. Vac. Sci. Technol. A 5 88
30. Rossnagel S M and Kaufman H R 1987 J. Vac. Sci. Technol. A 5 2276
31. Bunshah R F 1982 Deposition Technologies for Films and Coatings (New York: Noyes Publications) p 32
32. Wong S S M 1997 Computational Methodes in Physics and Engineering (Singapore: World Scientific) p 384
33. de Heer F J, Jansen R H J and van der Kaay W 1979 J. Phys. B 12 979
34. Nahar S N and Wadehra J M 1987 Phys. Rev. A 35 2051