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Volumn 62, Issue 3-6, 2003, Pages 501-508

Numerical challenges in particle-based approaches for the simulation of semiconductor devices

Author keywords

Charge transport modeling; InP; Monte Carlo

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; MONTE CARLO METHODS;

EID: 0037417029     PISSN: 03784754     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0378-4754(02)00229-X     Document Type: Conference Paper
Times cited : (9)

References (17)
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  • 4
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    • Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
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    • (1988) Phys. Rev. B , vol.38 , Issue.14 , pp. 9721-9745
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  • 5
    • 0000703422 scopus 로고
    • Lattice-gas cellular-automaton method for semiclassical transport in semiconductors
    • Kometer K., Zandler G., Vogl P., Lattice-gas cellular-automaton method for semiclassical transport in semiconductors. Phys. Rev. B. 46(3):1992;1382-1394.
    • (1992) Phys. Rev. B , vol.46 , Issue.3 , pp. 1382-1394
    • Kometer, K.1    Zandler, G.2    Vogl, P.3
  • 6
    • 0034297464 scopus 로고    scopus 로고
    • Hybrid full-band cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors
    • Saraniti M., Goodnick S., Hybrid full-band cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors. IEEE Trans. Electron Devices. 47(10):2000;1909-1915.
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.10 , pp. 1909-1915
    • Saraniti, M.1    Goodnick, S.2
  • 7
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    • Band-structure-dependent transport and impact ionization in GaAs
    • Shichijo H., Hess K., Band-structure-dependent transport and impact ionization in GaAs. Phys. Rev. B. 23(8):1981;4197-4207.
    • (1981) Phys. Rev. B , vol.23 , Issue.8 , pp. 4197-4207
    • Shichijo, H.1    Hess, K.2
  • 8
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    • A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon
    • Fischer B., Hofmann K., A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon. Appl. Phys. Lett. 76(9):2000;583-585.
    • (2000) Appl. Phys. Lett. , vol.76 , Issue.9 , pp. 583-585
    • Fischer, B.1    Hofmann, K.2
  • 10
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    • Ph.D. thesis, Technische Universität München, Walter Schottky Institute, Am Coulombwall, D85747 Garching, Germany
    • K. Kometer, Lösung der Boltzmann-Gleichung mit der Methode zellulärer Automaten, Ph.D. thesis, Technische Universität München, Walter Schottky Institute, Am Coulombwall, D85747 Garching, Germany, 1992.
    • (1992) Lösung der Boltzmann-Gleichung Mit der Methode Zellulärer Automaten
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  • 15
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    • Phase-space simplex Monte Carlo for semiconductor transport
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.