Plasma and injection modification of the gate dielectric in MOS structures

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 377-380

  Bondarenko, G G ^a   Andreev, V V ^b   Maslovsky, V M ^c   Stolyarov, A A ^b   Drach, V E ^b  

^a NATIONAL RESEARCH UNIVERSITY HIGHER SCHOOL OF ECONOMICS   (Russian Federation)

^b BAUMAN MOSCOW STATE TECHNICAL UNIVERSITY   (Russian Federation)

^c Zelenograd Research Institute of Physical Problems   (Russian Federation)

Author keywords

High field; Injection; Metal oxide semiconductor (MOS) structure; Plasma treatment

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); PLASMA JETS; SILICA; THIN FILMS; THRESHOLD VOLTAGE;

PLASMA TREATMENT;

MOS DEVICES;

EID: 0037416531     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01146-X     Document Type: Conference Paper

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