-
1
-
-
0000675006
-
Generation of Positive Charge in Silicon Dioxide during Avalanche and Tunnel Electron Injection
-
Fischetti, M.V., Generation of Positive Charge in Silicon Dioxide during Avalanche and Tunnel Electron Injection, J. Appl. Phys., 1985, vol. 57, no. 8, pp. 2860-2879.
-
(1985)
J. Appl. Phys.
, vol.57
, Issue.8
, pp. 2860-2879
-
-
Fischetti, M.V.1
-
2
-
-
3342907346
-
A Model of Surface States Generated by Tunnel Injection in MIS Structures
-
Soldatov, V.S., Voevodin, A.G., and Kolyada, V.A., A Model of Surface States Generated by Tunnel Injection in MIS Structures, Poverkhnost', 1990, no. 7, pp. 92-97.
-
(1990)
Poverkhnost'
, Issue.7
, pp. 92-97
-
-
Soldatov, V.S.1
Voevodin, A.G.2
Kolyada, V.A.3
-
3
-
-
0001767480
-
2/Si Interface after Hot Hole Stress
-
2/Si Interface After Hot Hole Stress, J. Appl. Phys., 1997, vol. 81, no. 6, pp. 2686-2692.
-
(1997)
J. Appl. Phys.
, vol.81
, Issue.6
, pp. 2686-2692
-
-
Al-Kofahi, I.S.1
Zhang, J.F.2
Groeseneken, G.3
-
4
-
-
0000532822
-
2/Si Interface at Elevated Temperature
-
2/Si Interface at Elevated Temperature, J. Appl. Phys., 1998, vol. 83, no. 2, pp. 843-850.
-
(1998)
J. Appl. Phys.
, vol.83
, Issue.2
, pp. 843-850
-
-
Zhang, J.F.1
Al-Kofahi, I.S.2
Groeseneken, G.3
-
5
-
-
0001759410
-
Generation and Relaxation Phenomena of Positive Charge and Interface Trap in a Metal-Oxide-Semiconductor Structure
-
Khosru, Q.D.M., Yasuda, N., Taniguchi, K., and Hamaguchi, C., Generation and Relaxation Phenomena of Positive Charge and Interface Trap in a Metal-Oxide-Semiconductor Structure, J. Appl. Phys., 1995, vol. 77, no. 9, pp. 4494-4503.
-
(1995)
J. Appl. Phys.
, vol.77
, Issue.9
, pp. 4494-4503
-
-
Khosru, Q.D.M.1
Yasuda, N.2
Taniguchi, K.3
Hamaguchi, C.4
-
6
-
-
85037460548
-
Correlated Variations of Fast and Slow States Generated by F-N Injection in n-Channel MIS Transistors under a Constant Gate Voltage
-
Shumovye i degradatsionnye protsessy v poluprovodnikovykh priborakh (Noise and Degradation Processes in Semiconductor Devices), Moscow: Popov Radio Engineering Society
-
Soldatov, V.S., Sobolev, N.V., and Kolyada, V.A., Correlated Variations of Fast and Slow States Generated by F-N Injection in n-Channel MIS Transistors under a Constant Gate Voltage, Shumovye i degradatsionnye protsessy v poluprovodnikovykh priborakh (Noise and Degradation Processes in Semiconductor Devices), Materialy mezhdunarodnogo nauchno-tekh. seminara (Proc. Int. Sci. Tech. Symposium), Moscow: Popov Radio Engineering Society, 1998, pp. 377-388.
-
(1998)
Materialy Mezhdunarodnogo Nauchno-tekh. Seminara (Proc. Int. Sci. Tech. Symposium)
, pp. 377-388
-
-
Soldatov, V.S.1
Sobolev, N.V.2
Kolyada, V.A.3
-
7
-
-
0348185809
-
Electron Capture in MIS Structures with Thermal Silicon Dioxide under Tunnel Injection
-
Soldatov, V.S., Sobolev, N.V., Varlashov, I.E., Kolyada, V.A., and Voevodin, A.G., Electron Capture in MIS Structures with Thermal Silicon Dioxide under Tunnel Injection, Izv. Vyssh. Uchebn. Zaved., Fiz., 1989, no. 12, pp. 82-84.
-
(1989)
Izv. Vyssh. Uchebn. Zaved., Fiz.
, Issue.12
, pp. 82-84
-
-
Soldatov, V.S.1
Sobolev, N.V.2
Varlashov, I.E.3
Kolyada, V.A.4
Voevodin, A.G.5
-
9
-
-
0027559742
-
2 Systems under Injection Degradation
-
2 Systems under Injection Degradation, Mikroelektronika, 1993, vol. 22, no. 2, pp. 20-26.
-
(1993)
Mikroelektronika
, vol.22
, Issue.2
, pp. 20-26
-
-
Kasumov, Yu.N.1
Kozlov, S.N.2
-
10
-
-
0010544554
-
Instability of the Parameters of Dielectric Layers under Conditions of High-Field Injection Stresses
-
Andreev, V.V., Baryshev, V.G., and Stolyarov, A.A., Instability of the Parameters of Dielectric Layers Under Conditions of High-Field Injection Stresses, J. Adv. Mater., 1995, vol. 2, no. 6, pp. 451-457.
-
(1995)
J. Adv. Mater.
, vol.2
, Issue.6
, pp. 451-457
-
-
Andreev, V.V.1
Baryshev, V.G.2
Stolyarov, A.A.3
-
11
-
-
0010611712
-
Charge Degradation of MIS Structures with Phosphosilicate Glass-Passivated Thermal Silicon Oxide at High-Field Tunnel Injection
-
Andreev, V.V., Baryshev, V.G., Bondarenko, G.G., Stolyarov, A.A., and Shakhnov, V.A., Charge Degradation of MIS Structures with Phosphosilicate Glass-Passivated Thermal Silicon Oxide at High-Field Tunnel Injection, Mikroelektronika, 1997, vol. 26, no. 6, pp. 640-646 [Russian Microelectronics, 1997, vol. 26, no. 6, pp. 378-383].
-
(1997)
Mikroelektronika
, vol.26
, Issue.6
, pp. 640-646
-
-
Andreev, V.V.1
Baryshev, V.G.2
Bondarenko, G.G.3
Stolyarov, A.A.4
Shakhnov, V.A.5
-
12
-
-
0010611712
-
-
Andreev, V.V., Baryshev, V.G., Bondarenko, G.G., Stolyarov, A.A., and Shakhnov, V.A., Charge Degradation of MIS Structures with Phosphosilicate Glass-Passivated Thermal Silicon Oxide at High-Field Tunnel Injection, Mikroelektronika, 1997, vol. 26, no. 6, pp. 640-646 [Russian Microelectronics, 1997, vol. 26, no. 6, pp. 378-383].
-
(1997)
Russian Microelectronics
, vol.26
, Issue.6
, pp. 378-383
-
-
-
13
-
-
0012717733
-
Interface States Induced by the Presence of Trapped Holes near the Silicon-Silicon Dioxide Interface
-
DiMaria, D.J., Buchanan, D.A., Stathis, J.H., and Stahlbush, R.E., Interface States Induced by the Presence of Trapped Holes near the Silicon-Silicon Dioxide Interface, J. Appl. Phys., 1995, vol. 77, no. 5, pp. 2032-2040.
-
(1995)
J. Appl. Phys.
, vol.77
, Issue.5
, pp. 2032-2040
-
-
DiMaria, D.J.1
Buchanan, D.A.2
Stathis, J.H.3
Stahlbush, R.E.4
-
14
-
-
0346925204
-
A DC Method for MIS Structure Control
-
Andreev, V.V., Baryshev, V.G., and Stolyarov, A.A., A DC Method for MIS Structure Control, S.-Peterb. Zh. Electron., 1997, no. 3, pp. 69-72.
-
(1997)
S.-Peterb. Zh. Electron.
, Issue.3
, pp. 69-72
-
-
Andreev, V.V.1
Baryshev, V.G.2
Stolyarov, A.A.3
-
15
-
-
0001414860
-
2-Si Interface Properties by Means of Very Low Frequency MOS Capacitance
-
2-Si Interface Properties by Means of Very Low Frequency MOS Capacitance, Surf. Sci., 1971, vol. 28, pp. 157-193.
-
(1971)
Surf. Sci.
, vol.28
, pp. 157-193
-
-
Castagne, R.1
Vapaille, A.2
-
16
-
-
0348185817
-
An Injection Method for Complex Control of Film Insulator Parameters in a Metal-Insulator-Semiconductor System
-
Andreev, V.V., Baryshev, V.G., Vikhrov, S.P., and Sidorov, Yu.A., An Injection Method for Complex Control of Film Insulator Parameters in a Metal-Insulator-Semiconductor System, Elektron. Tekh., Ser. 8, 1992, nos. 4-5, pp. 55-59.
-
(1992)
Elektron. Tekh., Ser. 8
, Issue.4-5
, pp. 55-59
-
-
Andreev, V.V.1
Baryshev, V.G.2
Vikhrov, S.P.3
Sidorov, Yu.A.4
-
17
-
-
0000635723
-
Theory of High-Field Electron Transport and Impact Ionization in Silicon Dioxide
-
Arnold, D., Cartier, E., and DiMaria, D.J., Theory of High-Field Electron Transport and Impact Ionization in Silicon Dioxide, Phys. Rev. B: Condens. Matter, 1994, vol. 49, no. 15, pp. 10278-10297.
-
(1994)
Phys. Rev. B: Condens. Matter
, vol.49
, Issue.15
, pp. 10278-10297
-
-
Arnold, D.1
Cartier, E.2
DiMaria, D.J.3
-
18
-
-
0031367910
-
Hydrogen Redistribution in Thin Silicon Dioxide Films under Electron Injection in High Field
-
Gadiyak, G.V., Hydrogen Redistribution in Thin Silicon Dioxide Films Under Electron Injection in High Field, J. Appl. Phys., 1997, vol. 82, no. 11, pp. 5573-5579.
-
(1997)
J. Appl. Phys.
, vol.82
, Issue.11
, pp. 5573-5579
-
-
Gadiyak, G.V.1
-
19
-
-
85037485938
-
2 Structure Degradation during Vacuum Annealing
-
S.-Peterburg
-
2 Structure Degradation during Vacuum Annealing, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1998, vol. 32, no. 9, pp. 1079-1082.
-
(1998)
Fiz. Tekh. Poluprovodn.
, vol.32
, Issue.9
, pp. 1079-1082
-
-
Gadiyak, G.V.1
Stathis, J.2
-
20
-
-
0346925196
-
Spatial Distribution of Charge Generated by Tunnel Injection of Electrons from Silicon into Thermal Dioxide of an MIS Structure
-
S.-Peterburg
-
Soldatov, V.S., Voevodin, A.G., Varlashov, I.B., Kolyada, V.A., and Sobolev, N.V., Spatial Distribution of Charge Generated by Tunnel Injection of Electrons from Silicon into Thermal Dioxide of an MIS Structure, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1990, vol. 24, no. 9, pp. 1611-1615.
-
(1990)
Fiz. Tekh. Poluprovodn.
, vol.24
, Issue.9
, pp. 1611-1615
-
-
Soldatov, V.S.1
Voevodin, A.G.2
Varlashov, I.B.3
Kolyada, V.A.4
Sobolev, N.V.5
|