Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots

Solid State Communications

Volumn 126, Issue 7, 2003, Pages 421-424

  Lee, Chang Yun ^a   Song, Jin Dong ^a   Lee, Yong Tak ^a   Kim, Tae Whan ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

A. Nanostructures; B. Crystal growth; D. Optical properties

Indexed keywords

ANNEALING; ELECTRON TRANSITIONS; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

SPECTRAL SHIFTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037404302     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00811-6     Document Type: Article

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