Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation

Applied Physics Letters

Volumn 82, Issue 2, 2003, Pages 206-208

  Feng, Z H ^a   Yang, H ^a   Zheng, X H ^a   Fu, Y ^a   Sun, Y P ^a   Shen, X M ^a   Wang, Y T ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PHOTOLUMINESCENCE; RELAXATION PROCESSES; STRAIN; X RAY DIFFRACTION;

RESIDUAL STRAIN RELAXATION;

GALLIUM NITRIDE;

EID: 0037434244     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536714     Document Type: Article

References (18)

1. M. Tamura, A. Hashimoto, J. Kasai, and A. Nishida, J. Cryst. Growth 147, 264 (1995).
2. C. W. Snyder, B. G. Orr, D. Kessler, and L. M. Sander, Phys. Rev. Lett. 66, 3032 (1991).
3. K. Hirmarsu, T. Detchprohm, and I. Aksaki, Jpn. J. Appl. Phys., Part 1 32, 1528 (1993).
4. T. Lei, M. Fanciulli, R. J. Molnar, T. D. Moustakas, R. J. Graham, and J. Scanlon, Appl. Phys. Lett. 59, 944 (1991).
5. D. P. Xu, H. Yang, J. B. Li, S. F. Li, Y. T. Wang, D. G. Zhao, and R. H. Wu, J. Electron. Mater. 29, 177 (2000).
6. W. Li, T. Arian, and L. J. Schowalter, J. Vac. Sci. Technol. B 12, 1067 (1994).
7. N. Frank, G. Springholz, and G. Bauer, J. Cryst. Growth 150, 1190 (1995).
8. I. Akasaki, H. Amano, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
9. T. S. Zheleva and W. M. Ashmawi, O.-H. Nam, and R. F. Davis, Appl. Phys. Lett. 74, 2492 (1999).
10. C. C. Yang, M. C. Wu, and G. C. Chi, J. Appl. Phys. 86, 6120 (1999).
11. H. Tanaka and H. Okumra, Proceedings of the Second International Conference Nitride Semiconductors (ICNS'97), 27-31 October 1997, Tokushima, Japan, Rump Session.
12. H. Tsuchiya, K. Sunaba, T. Suemasu, and F. Hasegawa, J. Cryst. Growth 198, 1056 (1999).
13. D. P. Xu, H. Yang, S. M. Zhang, L. X. Zheng, D. G. Zhao, S. F. Li, Y. T. Wang, and R. H. Wu, Thin Solid Films 372, 25 (2000).
14. X. H. Zheng, Y. T. Wang, Z. H. Fang, H. Yang, and J. W. Liang, J. Cryst. Growth (to be published).
15. K. Kim, W. Lamberecht, and B. Segall, Phys. Rev. B 50, 1502 (1994).
16. F. Benkabou, P. Becker, M. Certier, and H. Aourag, Phys. Status Solidi B 209, 223 (1998).
17. H. Sonomura, H. Uda, and A. Sugimura, J. Appl. Phys. 62, 4142 (1987).
18. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, Appl. Phys. Lett. 87, 965 (2000).